Thermoelectric Properties of Scaled Silicon Nanostructures Using the spds*-SO Atomistic Tight-Binding Model
نویسنده
چکیده
The progress in the synthesis of nanomaterials allows the realization of low-dimensional thermoelectric devices based on 1D nanowires (NWs) and 2D superlattices. These confined systems offer the possibility of partially engineering the electronic and phononic dispersions and scattering mechanisms. Thus, the electrical and thermal conductivity, and the Seebeck coefficient can be designed to some degree independently, providing enhanced ZT values compared to their bulk material’s value [1]. Enhanced performance was recently demonstrated for silicon NWs [2,3], a more common and economically feasible material. Although bulk silicon has a ZT~0.01, the ZT of silicon NWs was experimentally demonstrated to be ZT~1. Understanding the properties of NW demands proper modeling tools supporting material properties and structure parameter optimization in order to achieve the highest possible ZT values.
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Extracting thermoelectric properties of nanostructures using the atomistic spds*-SO tight-binding model
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